PART |
Description |
Maker |
IMP1233D IMP1810 IMP1811 IMP1812 IMP1815 IMP1816 I |
4.125V power reset RELAY 024VDC 01A DPDT-XX FORM:2C UC Bi-Lobe Standard Metal Shell Nano Offset Connector Low Power 5V/3.0V P Reset Low Power/ 5V/ P Reset Low Power, 5V, 楼矛P Reset Low Power 5V P Reset Low Power, 5V, P Reset Low Power, 5V, μP Reset 4.375V power reset
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IMP INC. IMP Inc IMP[IMP, Inc] IMP[IMP Inc]
|
2SA2118 |
Power Device - Power Transistors - General-Purpose power amplification Power Transistors Silicon PNP epitaxial planar type
|
PANASONIC[Panasonic Semiconductor]
|
RFS1006 PRFS-1006-0007 PRFS-1006-0008 PRFS-1006-00 |
3.4-3.6 GHz Power Amplifier 3400 MHz - 3600 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER 3.4-3.6 GHz Power Amplifier 3号至三月六日GHz功率放大 Single-band power amplifiers The RFS1006 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in a transmit applications in the 3.4-3.6 ...
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ANADIGICS, Inc. ANADIGICS[ANADIGICS, Inc] ANADIGICS[ANADIGICS Inc]
|
TDA16846 TDA16847 TDA1684603 TDA16846-2 TDA16847-2 |
Controller for Switch Mode Power Supplies Supporting Low Power Standby and Power Factor
|
Infineon Technologies AG
|
TA8260AH |
Max Power 40 W BTL 4CH Audio Power IC Max Power 40 W BTL 】 4CH Audio Power IC Max Power 40 W BTL x 4CH Audio Power IC RAC15-TA(-E)(-ST) Series - Powerline Regulated AC-DC Converters; Output Voltage (Vdc): 5V; Auxilary Voltage (Vdc): 12V; Features: Compact AC-DC Power
|
Toshiba Semiconductor Toshiba Corporation
|
2SA886 2SA0886 |
Power Device - Power Transistors - Others Silicon PNP epitaxial planar type (For low-frequency power amplification Complementary)
|
PANASONIC[Panasonic Semiconductor]
|
2SC5993 |
Power Device - Power Transistors - Television/Display For power amplification For TV VM circuit
|
PANASONIC[Panasonic Semiconductor]
|
NTC10D20 NTC100D10 NTC100D11 NTC100D9 NTC10D10 NTC |
Conversion power, switch mode power supply, UPS power protection
|
List of Unclassifed Man...
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IRLZ24N-006 IRL530N-015PBF IRL530N-031PBF IRL2505- |
18 A, 55 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 15 A, 100 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 104 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 120 A, 30 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 48 A, 100 V, 0.026 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 39 A, 20 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 61 A, 20 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 56 A, 30 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 85 A, 20 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 100 A, 30 V, 0.007 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 24 A, 30 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 27 A, 55 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 41 A, 55 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 48 A, 20 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 77 A, 55 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Bourns, Inc. Vishay Intertechnology, Inc.
|
2SD2420A |
Power Device - Power Transistors - General-Purpose power amplification
|
Panasonic
|
2SD1444A |
Power Device - Power Transistors - General-Purpose power amplification
|
Panasonic
|
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